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Additional info for Circuit techniques for low-voltage and high-speed A/D converters
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1 µm) so that electrons can rapidly traverse the base. 1 µm compares with a typical electron diffusion length in the base of 10 µm. 2. 1. 38) 24 BASIC BIPOLAR TRANSISTOR THEORY For practical values of collector/base reverse bias the electron concentration at the edge of the collector/base depletion region is close to zero. 42) WB Nab kT This equation gives some useful insight into transistor design options, since it shows that the collector current for a shallow emitter is inversely proportional to the product of the basewidth WB and the base doping Nab .