Download Circuit techniques for low-voltage and high-speed A/D by Mikko E. Waltari PDF

By Mikko E. Waltari

This beneficial monograph provides a complete of 7 prototypes: double-sampled S/H circuits, a time-interleaved ADC, an IF-sampling self-calibrated pipelined ADC, a present steerage DAC with a deglitcher, and pipelined ADCs utilizing the SO options.

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Device Lett. 10, 52 (1989). [18] Special issue on heterostructure transistors, IEEE Trans. Electron. Devices, 36, No. 10 (1989). [19] Special issue on bipolar transistor technology; past and future trends, IEEE Trans. Electron. Devices, 48, No. 11 (2001). L. H. D. F. C. S. Meyerson and T. Tice, ‘Si/SiGe epitaxial base transistors’, IEEE Trans. Electron. Devices, 42, 455 (1995). M. Sze, Physics of Semiconductor Devices, John Wiley, New York (1981). [22] K. Hart and A. Slob, ‘Integrated injection logic: a low cost bipolar logic concept’, IEEE Jnl Solid State Circuits, 7, 346 (1972).

Bardeen, ‘Electrical properties of pure silicon and silicon alloys containing boron and phosphorus’, Phys. , 75, 865 (1949). M. Sze, Physics of Semiconductor Devices, Wiley, Chichester (1985). R. L. M. J. Filliben, ‘Resistivity-dopant density relationship for boron-doped silicon’, Jnl Electrochem. Soc. 127, 2291 (1980). [15] G. Masetti, M. Severi and S. Solmi, ‘Modeling of carrier mobility against carrier concentration in arsenic, phosphorus, and boron doped silicon’, IEEE Trans. Electron. Devices, 30, 764 (1983).

1 µm) so that electrons can rapidly traverse the base. 1 µm compares with a typical electron diffusion length in the base of 10 µm. 2. 1. 38) 24 BASIC BIPOLAR TRANSISTOR THEORY For practical values of collector/base reverse bias the electron concentration at the edge of the collector/base depletion region is close to zero. 42) WB Nab kT This equation gives some useful insight into transistor design options, since it shows that the collector current for a shallow emitter is inversely proportional to the product of the basewidth WB and the base doping Nab .

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