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This booklet provides a wide-band and expertise self sustaining, SPICE-compatible RLC version for through-silicon vias (TSVs) in 3D built-in circuits. This version debts for quite a few results, together with dermis impact, depletion capacitance and within sight touch results. Readers will take advantage of in-depth insurance of strategies and know-how corresponding to 3D integration, Macro modeling, dimensional research and compact modeling, in addition to closed shape equations for the via silicon through parasitics. recommendations coated are verified through the use of TSVs in purposes corresponding to a spiral inductor and inductive-based communique process and bandpass filtering.
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Additional info for Arbitrary Modeling of TSVs for 3D Integrated Circuits
Louisa, G. Passemardc, Challenges for 3D IC integration: bonding quality and thermal managementc, IEEE, 2007 31. Y. J. O. C. 681–684 32. C. Chiang, S. 429–436 33. A. Rahman, R. Reif, System-level performance evaluation of three-dimensional integrated circuits. IEEE Trans. VLSI Syst. (Special Issue on System-Level Interconnect Prediction) 8(6), 671–678 (2000) 34. com/ 35. com/ 36. html 37. B. -L. Hung, F. Wang, Y. Xie, V. J. pdf 38. com/ 39. T. Yan, Q. Dong, Y. Takashima, Y. Kajitani, How does partitioning matter for 3D floorplanning?
Therefore, biasing the silicon substrate should alter the capacitance of the TSVs. So, now the TSVs are no longer a wire but behave as a variable capacitor (depending on the bias voltage), similar to a device (such as a MOS capacitor). The difference between 3D interconnect and 2D interconnect is that 2D wires have finite width and thickness, but infinite length. 3D wires have finite width, thickness, and finite length. 6. The shape can be rectangular or circular. But, from the simulation results, it can be found that the shape can affect the results very little.
Reduced power 8. Reduced packaging cost 9. Elimination of wire bonds 10. EMI and shielding 11. High bandwidth computer architectures 12. Use only one set of I/O pads to minimize parasitics due to I/O 13. Better reliability 14. Override the saturation of Moore’s law including bonding wires, TSV interconnections (which is a new silicon-based 3D packaging structure), metal bumps, and contactless communication (inductive and capacitive coupling). 4 summarizes the main difference between those four types of interconnects.