Download Analog Organic Electronics: Building Blocks for Organic by Hagen Marien PDF

By Hagen Marien

This publication offers perception into natural electronics expertise and in analog circuit ideas that may be used to extend the functionality of either analog and electronic natural circuits. It explores the area of natural electronics know-how for analog circuit purposes, particularly shrewdpermanent sensor platforms. It makes a speciality of the entire development blocks within the information direction of an natural sensor procedure among the sensor and the electronic processing block. Sensors, amplifiers, analog-to-digital converters and DC-DC converters are mentioned intimately. assurance contains circuit strategies, circuit implementation, layout judgements and size result of the construction blocks described.

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In this formula four parameters are 42 2 Organic Thin-Film Transistor Technology present which are directly determined by the production process. The carrier mobility μ, the insulator capacitance Cox , the threshold voltage VT , and the early voltage VE . In the scope of analog circuit design where the transistors are typically biased in the saturation regime, VT and μ are the most dominant parameters. Variations of the Cox have an identical effect to those of the mobility μ and are not separately discussed.

6 Schematic view of the VTE deposition technique for pentacene thin films The production process of the pentacene technologies (3 metal layers) has a low complexity compared to the production process of Si standard CMOS (5–10 metal layers). The critical layer in this process is the pentacene layer. The level of ordering in the crystals, the grain size of the pentacene grains, and the presence of lattice defects all have an influence on the transistor parameters, such as the mobility (μ) and the threshold voltage (VT ).

It decreases proportionally with the transistor current. Another effect also influences the value of rsd . 4. 33. The only possible drawback of this topology is found in the increase of the gate capacitance with 25 %. The effect of applying this technique in a single-stage analog amplifier on the gain, the gain-bandwidth product, and the bandwidth of that amplifier can be predicted through Eqs. 4 can be expected. The bandwidth of an amplifier is determined by C L and by the rsd . Both parameters slightly increase and consequently a decrease of the bandwidth (BW) of about 40 % is predicted.

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